STB20NM50-1 STMicroelectronics
Артикул
STB20NM50-1
Бренд
STMicroelectronics
Описание
MOSFET N-CH 550V 20A I2PAK, N-Channel 550 V 20A (Tc) 192W (Tc) Through Hole I2PAK
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/STB20NM50-1.jpg
Base Product Number
STB20N
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
550 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
250mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1480 pF @ 25 V
FET Feature
-
Other Names
497-5382-5,-497-5382-5,1805-STB20NM50-1,STB20NM50-1-ND
REACH Status
REACH Unaffected
Series
MDmesh™
Package
Tube
Part Status
Obsolete
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I?Pak, TO-262AA
Supplier Device Package
I2PAK
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
Power Dissipation (Max)
192W (Tc)
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