STB21NM50N STMicroelectronics
Артикул
STB21NM50N
Бренд
STMicroelectronics
Описание
MOSFET N-CH 500V 18A D2PAK, N-Channel 500 V 18A (Tc) 140W (Tc) Surface Mount D2PAK
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/STB21NM50N.jpg
Base Product Number
STB21N
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1950 pF @ 25 V
FET Feature
-
Other Names
1026-STB21NM50N,497-5783-6,STB21NM50N-ND,497-5783-1,497-5783-2
REACH Status
REACH Unaffected
Series
MDmesh™ II
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
D2PAK
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1,000
Power Dissipation (Max)
140W (Tc)
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