STB80NF55-06-1 STMicroelectronics
Артикул
STB80NF55-06-1
Бренд
STMicroelectronics
Описание
MOSFET N-CH 55V 80A I2PAK, N-Channel 55 V 80A (Tc) 300W (Tc) Through Hole I2PAK
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/STB80NF55-06-1.jpg
Base Product Number
STB80
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
189 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4400 pF @ 25 V
FET Feature
-
Other Names
STB80NF55-06-1-ND,-497-16196-5,497-16196-5
REACH Status
REACH Unaffected
Series
STripFET™ II
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I?Pak, TO-262AA
Supplier Device Package
I2PAK
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
Power Dissipation (Max)
300W (Tc)
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