STD10N60DM2 STMicroelectronics
Артикул
STD10N60DM2
Бренд
STMicroelectronics
Описание
MOSFET N-CH 650V 8A DPAK, N-Channel 650 V 8A (Tc) 109W (Tc) Surface Mount DPAK
Цена
291 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/STD10N60DM2.jpg
Base Product Number
STD10
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
530mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
529 pF @ 100 V
FET Feature
-
Other Names
497-16924-1,497-16924-2,497-16924-6
REACH Status
REACH Unaffected
Series
MDmesh™ DM2
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
DPAK
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Power Dissipation (Max)
109W (Tc)
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