STD2HNK60Z-1 STMicroelectronics
Артикул
STD2HNK60Z-1
Бренд
STMicroelectronics
Описание
MOSFET N-CH 600V 2A IPAK, N-Channel 600 V 2A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)
Цена
246 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/STD2HNK60Z-1.jpg
Base Product Number
STD2HNK60
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
280 pF @ 25 V
FET Feature
-
Other Names
497-12783-5,STD2HNK60Z1,STD2HNK60Z-1-ND
REACH Status
REACH Unaffected
Series
SuperMESH™
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
TO-251 (IPAK)
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
75
Power Dissipation (Max)
45W (Tc)
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