STD60NH03L-1 STMicroelectronics
Артикул
STD60NH03L-1
Бренд
STMicroelectronics
Описание
MOSFET N-CH 30V 60A I-PAK, N-Channel 30 V 60A (Tc) 70W (Tc) Through Hole I-PAK
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/STD60NH03L-1.jpg
Base Product Number
STD60N
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2200 pF @ 25 V
FET Feature
-
Other Names
497-3164-5,497-3164-5-NDR
REACH Status
REACH Unaffected
Series
STripFET™ III
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
I-PAK
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
3,000
Power Dissipation (Max)
70W (Tc)
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