STD80N6F6 STMicroelectronics
Артикул
STD80N6F6
Бренд
STMicroelectronics
Описание
MOSFET N-CH 60V 80A DPAK, N-Channel 60 V 80A (Tc) 120W (Tc) Surface Mount DPAK
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/STD80N6F6.jpg
Base Product Number
STD80
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
122 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7480 pF @ 25 V
FET Feature
-
Other Names
497-13942-2,STD80N6F6-ND,497-13942-1,497-13942-6
REACH Status
REACH Unaffected
Series
Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
DPAK
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Power Dissipation (Max)
120W (Tc)
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