STE139N65M5 STMicroelectronics
Артикул
STE139N65M5
Бренд
STMicroelectronics
Описание
MOSFET N-CH 650V 130A ISOTOP, N-Channel 650 V 130A (Tc) 672W (Tc) Chassis Mount ISOTOP
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/STE139N65M5.jpg
Base Product Number
STE1
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
17mOhm @ 65A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
363 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
15600 pF @ 100 V
FET Feature
-
Other Names
497-16942
REACH Status
REACH Unaffected
Series
MDmesh™
Package
Tube
Part Status
Obsolete
Operating Temperature
150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Supplier Device Package
ISOTOP
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
100
Power Dissipation (Max)
672W (Tc)
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