STGW30M65DF2 STMicroelectronics
Артикул
STGW30M65DF2
Бренд
STMicroelectronics
Описание
TRENCH GATE FIELD-STOP IGBT M SE, IGBT Trench Field Stop 650 V 60 A 258 W Through Hole TO-247-3
Цена
611 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/STGW30M65DF2.jpg
Base Product Number
STGW30
Input Type
Standard
Test Condition
400V, 30A, 10Ohm, 15V
Power - Max
258 W
Current - Collector (Ic) (Max)
60 A
Voltage - Collector Emitter Breakdown (Max)
650 V
IGBT Type
Trench Field Stop
Current - Collector Pulsed (Icm)
120 A
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 30A
Switching Energy
300µJ (on), 960µJ (off)
Gate Charge
80 nC
Td (on/off) @ 25°C
31.6ns/115ns
Other Names
497-16485-5
REACH Status
REACH Unaffected
Series
-
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
30
Reverse Recovery Time (trr)
140 ns
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