STGYA120M65DF2 STMicroelectronics
Артикул
STGYA120M65DF2
Бренд
STMicroelectronics
Описание
TRENCH GATE FIELD-STOP IGBT, M S, IGBT NPT, Trench Field Stop 650 V 160 A 625 W Through Hole MAX247™
Цена
2 454 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/STGYA120M65DF2.jpg
Base Product Number
STGYA120
Input Type
Standard
Test Condition
400V, 120A, 4.7Ohm, 15V
Power - Max
625 W
Current - Collector (Ic) (Max)
160 A
Voltage - Collector Emitter Breakdown (Max)
650 V
IGBT Type
NPT, Trench Field Stop
Current - Collector Pulsed (Icm)
360 A
Vce(on) (Max) @ Vge, Ic
1.95V @ 15V, 120A
Switching Energy
1.8mJ (on), 4.41mJ (off)
Gate Charge
420 nC
Td (on/off) @ 25°C
66ns/185ns
Other Names
497-16976
REACH Status
REACH Unaffected
Series
M
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3 Exposed Pad
Supplier Device Package
MAX247™
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
600
Reverse Recovery Time (trr)
202 ns
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