STGYA75H120DF2 STMicroelectronics
Артикул
STGYA75H120DF2
Бренд
STMicroelectronics
Описание
TRENCH GATE FIELD-STOP 1200 V, 7, IGBT Trench Field Stop 1200 V 150 A 750 W Through Hole TO-247
Цена
1 917 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/STGYA75H120DF2.jpg
Package / Case
TO-247-3
Supplier Device Package
TO-247
IGBT Type
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
150 A
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 75A
Reverse Recovery Time (trr)
356 ns
Current - Collector Pulsed (Icm)
300 A
Switching Energy
4.3mJ (on), 3.9mJ (off)
Gate Charge
313 nC
Td (on/off) @ 25°C
61ns/366ns
Power - Max
750 W
RoHS Status
ROHS3 Compliant
Series
-
Package
Tube
Part Status
Active
Other Names
497-STGYA75H120DF2
Standard Package
30
ECCN
EAR99
HTSUS
8541.29.0095
Input Type
Standard
Operating Temperature
-55°C ~ 175°C (TJ)
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Mounting Type
Through Hole
Test Condition
600V, 75A, 10Ohm, 15V
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