STI12NM50N STMicroelectronics
Артикул
STI12NM50N
Бренд
STMicroelectronics
Описание
MOSFET N-CH 500V 11A I2PAK, N-Channel 500 V 11A (Tc) 100W (Tc) Through Hole I2PAK
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/STI12NM50N.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
940 pF @ 50 V
FET Feature
-
Base Product Number
STI12N
REACH Status
REACH Unaffected
Standard Package
50
Series
MDmesh™ II
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I?Pak, TO-262AA
Supplier Device Package
I2PAK
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Power Dissipation (Max)
100W (Tc)
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