STL3N65M2 STMicroelectronics
Артикул
STL3N65M2
Бренд
STMicroelectronics
Описание
MOSFET N-CH 650V 2.3A POWERFLAT, N-Channel 650 V 2.3A (Tc) 22W (Tc) Surface Mount PowerFlat™ (3.3x3.3)
Цена
172 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/STL3N65M2.jpg
Base Product Number
STL3
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
155 pF @ 100 V
FET Feature
-
Other Names
497-18738-6,497-18738-2,497-18738-1,STL3N65M2-ND
REACH Status
REACH Unaffected
Series
MDmesh™ M2
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
PowerFlat™ (3.3x3.3)
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
3,000
Power Dissipation (Max)
22W (Tc)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут