STN1N20 STMicroelectronics
Артикул
STN1N20
Бренд
STMicroelectronics
Описание
MOSFET N-CH 200V 1A SOT223, N-Channel 200 V 1A (Tc) 2.9W (Tc) Surface Mount SOT-223
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/STN1N20.jpg
Base Product Number
STN1N
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15.7 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
206 pF @ 25 V
FET Feature
-
Other Names
497-3176-6,497-3176-1,497-3176-2,-497-3176-2,497-3176-1-NDR,-497-3176-1,497-3176-2-NDR
REACH Status
REACH Unaffected
Series
MESH OVERLAY™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
SOT-223
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
4,000
Power Dissipation (Max)
2.9W (Tc)
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