STP12NM60N STMicroelectronics
Артикул
STP12NM60N
Бренд
STMicroelectronics
Описание
MOSFET N-CH 600V 10A TO220AB, N-Channel 600 V 10A (Tc) 90W (Tc) Through Hole TO-220
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/STP12NM60N.jpg
Base Product Number
STP12
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
410mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30.5 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
960 pF @ 50 V
FET Feature
-
Other Names
497-7503-5,STP12NM60N-ND
REACH Status
REACH Unaffected
Series
MDmesh™ II
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
Power Dissipation (Max)
90W (Tc)
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