STP5N120 STMicroelectronics
Артикул
STP5N120
Бренд
STMicroelectronics
Описание
MOSFET N-CH 1200V 4.7A TO220-3, N-Channel 1200 V 4.7A (Tc) 160W (Tc) Through Hole TO-220
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/STP5N120.jpg
Base Product Number
STP5N
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.5Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id
5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
120 pF @ 25 V
FET Feature
-
Other Names
STP5N120-ND,497-8811-5
REACH Status
REACH Unaffected
Series
SuperMESH™
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
Power Dissipation (Max)
160W (Tc)
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