STQ1NK60ZR-AP STMicroelectronics
Артикул
STQ1NK60ZR-AP
Бренд
STMicroelectronics
Описание
MOSFET N-CH 600V 300MA TO92-3, N-Channel 600 V 300mA (Tc) 3W (Tc) Through Hole TO-92-3
Цена
39 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/STQ1NK60ZR-AP.jpg
Base Product Number
STQ1NK60
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
15Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
6.9 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
94 pF @ 25 V
FET Feature
-
Other Names
-497-12343-1,STQ1NK60ZRAP,-497-12343-3,497-12343-1,497-12343-3
REACH Status
REACH Unaffected
Series
SuperMESH™
Package
Cut Tape (CT)Tape & Box (TB)
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,000
Power Dissipation (Max)
3W (Tc)
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