STS1HNK60 STMicroelectronics
Артикул
STS1HNK60
Бренд
STMicroelectronics
Описание
MOSFET N-CH 600V 300MA 8SO, N-Channel 600 V 300mA (Tc) 2W (Tc) Surface Mount 8-SOIC
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/STS1HNK60.jpg
Base Product Number
STS1
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
8.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
156 pF @ 25 V
FET Feature
-
Other Names
497-3530-1-NDR,497-3530-1,497-3530-2,497-3530-2-NDR
REACH Status
REACH Unaffected
Series
SuperMESH™
Package
Tape & Reel (TR)Cut Tape (CT)
Part Status
Obsolete
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Power Dissipation (Max)
2W (Tc)
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