STU12N65M5 STMicroelectronics
Артикул
STU12N65M5
Бренд
STMicroelectronics
Описание
MOSFET N-CH 650V 8.5A IPAK, N-Channel 650 V 8.5A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/STU12N65M5.jpg
Base Product Number
STU12N
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
430mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
900 pF @ 100 V
FET Feature
-
Other Names
STU12N65M5-ND,-497-11401-5,497-11401-5
REACH Status
REACH Unaffected
Series
MDmesh™ V
Package
Tube
Part Status
Obsolete
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
TO-251 (IPAK)
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
75
Power Dissipation (Max)
70W (Tc)
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