STX112 STMicroelectronics
Артикул
STX112
Бренд
STMicroelectronics
Описание
TRANS NPN DARL 100V 2A TO-92, Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A - 1.2 W Through Hole TO-92-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/STX112.jpg
REACH Status
REACH Unaffected
Base Product Number
STX112
Power - Max
1.2 W
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
2.5V @ 8mA, 2A
Current - Collector Cutoff (Max)
2mA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 1A, 4V
Standard Package
2,500
HTSUS
8541.29.0095
ECCN
EAR99
Series
-
Package
Bulk
Part Status
Obsolete
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Frequency - Transition
-
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