BSS123W Taiwan Semiconductor
Артикул
BSS123W
Бренд
Taiwan Semiconductor
Описание
100V, 0.16A, SINGLE N-CHANNEL PO, N-Channel 100 V 160mA (Ta) 298mW (Ta) Surface Mount SOT-323
Цена
98 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BSS123W.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
160mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5Ohm @ 160mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
30 pF @ 50 V
FET Feature
-
Supplier Device Package
SOT-323
REACH Status
REACH Unaffected
Standard Package
3,000
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
1801-BSS123WTR,1801-BSS123WDKR,1801-BSS123WCT
Power Dissipation (Max)
298mW (Ta)
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