ES1JL R3G Taiwan Semiconductor
Артикул
ES1JL R3G
Бренд
Taiwan Semiconductor
Описание
DIODE GEN PURP 600V 1A SUB SMA, Diode Standard 600 V 1A Surface Mount Sub SMA
Цена
121 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Diodes - Rectifiers - Single, Диоды - Выпрямители - Одиночные
Image
files/ES1JL-R3G.jpg
Package / Case
DO-219AB
Supplier Device Package
Sub SMA
Diode Type
Standard
Voltage - DC Reverse (Vr) (Max)
600 V
Current - Average Rectified (Io)
1A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 1 A
Speed
Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr
5 µA @ 600 V
Capacitance @ Vr, F
8pF @ 4V, 1MHz
Operating Temperature - Junction
-55°C ~ 150°C
Other Names
ES1JL R3GCT-ND,ES1JLR3GTR,ES1JLR3GDKR,ES1JL R3GCT,ES1JL R3GTR-ND,ES1JLR3GCT,ES1JL R3GDKR,ES1JL R3GDKR-ND,ES1JL R3GTR
Standard Package
1,800
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Mounting Type
Surface Mount
Base Product Number
ES1J
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.10.0080
Reverse Recovery Time (trr)
35 ns
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