TSM070NA04LCR RLG Taiwan Semiconductor
Артикул
TSM070NA04LCR RLG
Бренд
Taiwan Semiconductor
Описание
MOSFET N-CH 40V 91A 8PDFN, N-Channel 40 V 91A (Tc) 113W (Tc) Surface Mount 8-PDFN (5x6)
Цена
155 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/TSM070NA04LCR-RLG.jpg
Supplier Device Package
8-PDFN (5x6)
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
91A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
40 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
7mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
23.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1469 pF @ 20 V
FET Feature
-
Package / Case
8-PowerTDFN
Other Names
TSM070NA04LCR RLGDKR,TSM070NA04LCR RLGCT,TSM070NA04LCR RLGCT-ND,TSM070NA04LCR RLGTR,TSM070NA04LCR RLGTR-ND,TSM070NA04LCRRLGDKR,TSM070NA04LCRRLGTR,TSM070NA04LCRRLGCT,TSM070NA04LCR RLGDKR-ND
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
TSM070
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Power Dissipation (Max)
113W (Tc)
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