TSM085P03CV RGG Taiwan Semiconductor
Артикул
TSM085P03CV RGG
Бренд
Taiwan Semiconductor
Описание
MOSFET P-CH 30V 64A 8PDFN, P-Channel 30 V 64A (Tc) 50W (Tc) Surface Mount 8-PDFN (3x3)
Цена
363 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/TSM085P03CV-RGG.jpg
Supplier Device Package
8-PDFN (3x3)
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
64A (Tc)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
30 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.5mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3234 pF @ 15 V
FET Feature
-
Package / Case
8-PowerWDFN
Other Names
TSM085P03CV RGGCT-ND,TSM085P03CV RGGTR,TSM085P03CV RGGTR-ND,TSM085P03CV RGGCT,TSM085P03CV RGGDKR-ND,TSM085P03CVRGGDKR,TSM085P03CVRGGCT,TSM085P03CVRGGTR,TSM085P03CV RGGDKR
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
TSM085
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
5,000
Power Dissipation (Max)
50W (Tc)
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