TSM150P03PQ33 RGG Taiwan Semiconductor
Артикул
TSM150P03PQ33 RGG
Бренд
Taiwan Semiconductor
Описание
MOSFET P-CH 30V 36A 8PDFN, P-Channel 30 V 36A (Tc) 27.8W (Tc) Surface Mount 8-PDFN (3x3)
Цена
134 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/TSM150P03PQ33-RGG.jpg
Supplier Device Package
8-PDFN (3x3)
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
36A (Tc)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
30 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
15mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
29.3 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1829 pF @ 15 V
FET Feature
-
Package / Case
8-PowerWDFN
Other Names
TSM150P03PQ33 RGGCT-ND,TSM150P03PQ33RGGCT,TSM150P03PQ33 RGGDKR-ND,TSM150P03PQ33RGGTR,TSM150P03PQ33 RGGCT,TSM150P03PQ33 RGGTR,TSM150P03PQ33RGGDKR,TSM150P03PQ33 RGGTR-ND,TSM150P03PQ33 RGGDKR
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
TSM150
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
5,000
Power Dissipation (Max)
27.8W (Tc)
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