TSM2309CX RFG Taiwan Semiconductor
Артикул
TSM2309CX RFG
Бренд
Taiwan Semiconductor
Описание
MOSFET P-CHANNEL 60V 3.1A SOT23, P-Channel 60 V 3.1A (Tc) 1.56W (Tc) Surface Mount SOT-23
Цена
145 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/TSM2309CX-RFG.jpg
Supplier Device Package
SOT-23
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
3.1A (Tc)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
60 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
190mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.2 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
425 pF @ 30 V
FET Feature
-
Package / Case
TO-236-3, SC-59, SOT-23-3
Other Names
TSM2309CXRFGTR,TSM2309CXRFGCT,TSM2309CXRFGDKR,TSM2309CX RFGTR-ND,TSM2309CX RFGDKR,TSM2309CX RFGCT,TSM2309CX RFGCT-ND,TSM2309CX RFGTR,TSM2309CX RFGDKR-ND
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Base Product Number
TSM2309
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
3,000
Power Dissipation (Max)
1.56W (Tc)
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