TSM60NB1R4CH C5G Taiwan Semiconductor
Артикул
TSM60NB1R4CH C5G
Бренд
Taiwan Semiconductor
Описание
MOSFET N-CHANNEL 600V 3A TO251, N-Channel 600 V 3A (Tc) 28.4W (Tc) Through Hole TO-251 (IPAK)
Цена
424 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/TSM60NB1R4CH-C5G.jpg
Supplier Device Package
TO-251 (IPAK)
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.12 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
257.3 pF @ 100 V
FET Feature
-
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Other Names
TSM60NB1R4CH C5G-ND,TSM60NB1R4CHC5G
Series
-
Package
Tube
Part Status
Active
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
TSM60
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
75
Power Dissipation (Max)
28.4W (Tc)
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