CSD13302W Texas Instruments
Артикул
CSD13302W
Бренд
Texas Instruments
Описание
MOSFET N-CH 12V 1.6A 4DSBGA, N-Channel 12 V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA (1x1)
Цена
90 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/CSD13302W.jpg
Standard Package
3,000
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
17.1mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.8 nC @ 4.5 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
862 pF @ 6 V
FET Feature
-
Other Names
CSD13302W-ND,2156-CSD13302W,TEXTISCSD13302W,296-48118-6,296-48118-1,296-48118-2
HTSUS
8541.29.0095
Series
NexFET™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
4-UFBGA, DSBGA
Supplier Device Package
4-DSBGA (1x1)
Base Product Number
CSD13302
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
Power Dissipation (Max)
1.8W (Ta)
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