CSD18502KCS Texas Instruments
Артикул
CSD18502KCS
Бренд
Texas Instruments
Описание
MOSFET N-CH 40V 100A TO220-3, N-Channel 40 V 100A (Tc) 259W (Tc) Through Hole TO-220-3
Цена
475 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/CSD18502KCS.jpg
Supplier Device Package
TO-220-3
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.1V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4680 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
259W (Tc)
Package / Case
TO-220-3
Other Names
296-34940-5,-CSD18502KCS-NDR,296-34940-5-ND,2156-CSD18502KCS,296-CSD18502KCS,-296-34940-5-ND,-CSD18502KCSINACTIVE,296-34940-5-NDR,-296-34940-5,TEXTISCSD18502KCS,296-34940-5INACTIVE
Series
NexFET™
Package
Tube
Part Status
Active
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
CSD18502
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
REACH Status
REACH Affected
Gate Charge (Qg) (Max) @ Vgs
62 nC @ 10 V
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