CSD19501KCS Texas Instruments
Артикул
CSD19501KCS
Бренд
Texas Instruments
Описание
MOSFET N-CH 80V 100A TO220-3, N-Channel 80 V 100A (Ta) 217W (Tc) Through Hole TO-220-3
Цена
401 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/CSD19501KCS.jpg
Standard Package
50
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
6.6mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3980 pF @ 40 V
FET Feature
-
Other Names
2156-CSD19501KCS,296-37286-5,-296-37286-5-ND,TEXTISCSD19501KCS,CSD19501KCS-ND,-296-37286-5,-CSD19501KCSINACTIVE-NDR
HTSUS
8541.29.0095
Series
NexFET™
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Base Product Number
CSD19501
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
Power Dissipation (Max)
217W (Tc)
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