CSD19531KCS Texas Instruments
Артикул
CSD19531KCS
Бренд
Texas Instruments
Описание
MOSFET N-CH 100V 100A TO220-3, N-Channel 100 V 100A (Ta) 214W (Tc) Through Hole TO-220-3
Цена
403 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/CSD19531KCS.jpg
Standard Package
50
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
7.7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3870 pF @ 50 V
FET Feature
-
Other Names
-CSD19531KCS-NDR,2156-CSD19531KCS,-296-37480-5-ND,296-37480-5,TEXTISCSD19531KCS,296-37480-5-NDR,CSD19531KCS-ND
HTSUS
8541.29.0095
Series
NexFET™
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Base Product Number
CSD19531
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
Power Dissipation (Max)
214W (Tc)
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