CSD19531Q5A Texas Instruments
Артикул
CSD19531Q5A
Бренд
Texas Instruments
Описание
MOSFET N-CH 100V 100A 8VSON, N-Channel 100 V 100A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount 8-VSONP (5x6)
Цена
336 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/CSD19531Q5A.jpg
Standard Package
2,500
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
6.4mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3870 pF @ 50 V
FET Feature
-
Other Names
-CSD19531Q5AINACTIVE,296-41232-2,296-41232-1,CSD19531Q5A-ND,296-41232-6,-CSD19531Q5A-NDR
HTSUS
8541.29.0095
Series
NexFET™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-VSONP (5x6)
Base Product Number
CSD19531
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
Power Dissipation (Max)
3.3W (Ta), 125W (Tc)
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