CSD19536KCS Texas Instruments
Артикул
CSD19536KCS
Бренд
Texas Instruments
Описание
MOSFET N-CH 100V 150A TO220-3, N-Channel 100 V 150A (Ta) 375W (Tc) Through Hole TO-220-3
Цена
937 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/CSD19536KCS.jpg
Supplier Device Package
TO-220-3
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
150A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
2.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.2V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
12000 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
375W (Tc)
Package / Case
TO-220-3
Other Names
296-37289-5,296-37289-5-NDR,-CSD19536KCS-NDR,-CSD19536KCSINACTIVE
Series
NexFET™
Package
Tube
Part Status
Active
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
CSD19536
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
REACH Status
REACH Affected
Gate Charge (Qg) (Max) @ Vgs
153 nC @ 10 V
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