CSD19536KTTT Texas Instruments
Артикул
CSD19536KTTT
Бренд
Texas Instruments
Описание
MOSFET N-CH 100V 200A DDPAK, N-Channel 100 V 200A (Ta) 375W (Tc) Surface Mount DDPAK/TO-263-3
Цена
1 123 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/CSD19536KTTT.jpg
Standard Package
50
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
200A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
153 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
12000 pF @ 50 V
FET Feature
-
Other Names
296-41136-6,296-41136-1,296-41136-2
HTSUS
8541.29.0095
Series
NexFET™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-4, D?Pak (3 Leads + Tab), TO-263AA
Supplier Device Package
DDPAK/TO-263-3
Base Product Number
CSD19536
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
2 (1 Year)
REACH Status
REACH Affected
ECCN
EAR99
Power Dissipation (Max)
375W (Tc)
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