CSD19537Q3 Texas Instruments
Артикул
CSD19537Q3
Бренд
Texas Instruments
Описание
MOSFET N-CH 100V 9.7A/50A 8VSON, N-Channel 100 V 50A (Ta) 2.8W (Ta), 83W (Tc) Surface Mount 8-VSON (3.3x3.3)
Цена
253 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/CSD19537Q3.jpg
Standard Package
2,500
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
50A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
14.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1680 pF @ 50 V
FET Feature
-
Other Names
296-44351-1,296-44351-2,CSD19537Q3-ND,296-44351-6
HTSUS
8541.29.0095
Series
NexFET™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
8-VSON (3.3x3.3)
Base Product Number
CSD19537
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
Power Dissipation (Max)
2.8W (Ta), 83W (Tc)
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