CSD19538Q2T Texas Instruments
Артикул
CSD19538Q2T
Бренд
Texas Instruments
Описание
MOSFET N-CH 100V 13.1A 6WSON, N-Channel 100 V 13.1A (Tc) 2.5W (Ta), 20.2W (Tc) Surface Mount 6-WSON (2x2)
Цена
234 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/CSD19538Q2T.jpg
Standard Package
250
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
13.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
59mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.6 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
454 pF @ 50 V
FET Feature
-
Other Names
296-44612-1,296-44612-2,296-44612-6
HTSUS
8541.29.0095
Series
NexFET™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-WDFN Exposed Pad
Supplier Device Package
6-WSON (2x2)
Base Product Number
CSD19538
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
Power Dissipation (Max)
2.5W (Ta), 20.2W (Tc)
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