CSD25213W10 Texas Instruments
Артикул
CSD25213W10
Бренд
Texas Instruments
Описание
MOSFET P-CH 20V 1.6A 4DSBGA, P-Channel 20 V 1.6A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1)
Цена
84 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/CSD25213W10.jpg
Supplier Device Package
4-DSBGA (1x1)
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
47mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA
Vgs (Max)
-6V
Input Capacitance (Ciss) (Max) @ Vds
478 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1W (Ta)
Package / Case
4-UFBGA, DSBGA
Other Names
296-40004-6,CSD25213W10-ND,296-40004-2,-296-40004-1-ND,296-40004-1
Series
NexFET™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
CSD25213
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
3,000
REACH Status
REACH Unaffected
Gate Charge (Qg) (Max) @ Vgs
2.9 nC @ 4.5 V
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