CSD25301W1015 Texas Instruments
Артикул
CSD25301W1015
Бренд
Texas Instruments
Описание
MOSFET P-CH 20V 2.2A 6DSBGA, P-Channel 20 V 2.2A (Tc) 1.5W (Ta) Surface Mount 6-DSBGA (1x1.5)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/CSD25301W1015.jpg
Supplier Device Package
6-DSBGA (1x1.5)
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
75mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
270 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.5W (Ta)
Package / Case
6-UFBGA, DSBGA
Other Names
-296-24259-1-ND,296-24259-2-NDR,296-24259-1-NDR,-CSD25301W1015-NDR,-296-24259-1-NDR,296-24259-6,296-24259-6-NDR,296-24259-1,296-24259-2
Series
NexFET™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
CSD2530
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
3,000
REACH Status
REACH Unaffected
Gate Charge (Qg) (Max) @ Vgs
2.5 nC @ 4.5 V
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