BQ4011YMA-100 Texas Instruments
Артикул
BQ4011YMA-100
Бренд
Texas Instruments
Описание
IC NVSRAM 256KBIT PARALLEL 28DIP, NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x 8) Parallel 100 ns 28-DIP Module (18.42x37.72)
Теги
Integrated Circuits (ICs), Интегральные микросхемы (ИМС), Memory, Память
Image
files/BQ4011YMA-100.jpg
HTSUS
8542.32.0041
Other Names
296-9392-5,296-9392-5-NDR,-296-9392-5-ND,-296-9392-5-NDR,-296-9392-5,-BQ4011YMA-100-NDR
Standard Package
14
Technology
NVSRAM (Non-Volatile SRAM)
Voltage - Supply
4.5V ~ 5.5V
Memory Type
Non-Volatile
Memory Format
NVSRAM
Memory Size
256Kb (32K x 8)
Memory Interface
Parallel
Write Cycle Time - Word, Page
100ns
ECCN
EAR99
REACH Status
REACH Unaffected
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
0°C ~ 70°C (TA)
Mounting Type
Through Hole
Package / Case
28-DIP Module (0.61", 15.49mm)
Supplier Device Package
28-DIP Module (18.42x37.72)
Base Product Number
BQ4011
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Access Time
100 ns
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