RN1427TE85LF Toshiba Semiconductor
Артикул
RN1427TE85LF
Бренд
Toshiba Semiconductor
Описание
TRANS PREBIAS NPN 50V 0.8A SMINI, Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 800 mA 300 MHz 200 mW Surface Mount S-Mini
Цена
19 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Pre-Biased, Транзисторы - биполярные (BJT) - одиночные, с предварительной изоляцией
Image
files/RN1427TE85LF.jpg
Supplier Device Package
S-Mini
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
800 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
250mV @ 1mA, 50mA
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
90 @ 100mA, 1V
Power - Max
200 mW
Frequency - Transition
300 MHz
Resistor - Base (R1)
2.2 kOhms
Package / Case
TO-236-3, SC-59, SOT-23-3
Other Names
RN1427(TE85L,F)
Series
-
Package
Tape & Reel (TR)
Part Status
Active
Mounting Type
Surface Mount
Base Product Number
RN1427
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Standard Package
3,000
Resistor - Emitter Base (R2)
10 kOhms
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