UF3SC120009K4S UnitedSiC
Артикул
UF3SC120009K4S
Бренд
UnitedSiC
Описание
SICFET N-CH 1200V 120A TO247-4, N-Channel 1200 V 120A (Tc) 789W (Tc) Through Hole TO-247-4
Цена
14 945 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/UF3SC120009K4S.jpg
Technology
SiCFET (Cascode SiCJFET)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V
Rds On (Max) @ Id, Vgs
11mOhm @ 100A, 12V
Vgs(th) (Max) @ Id
6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
234 nC @ 15 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8512 pF @ 100 V
FET Feature
-
Supplier Device Package
TO-247-4
Moisture Sensitivity Level (MSL)
Not Applicable
Base Product Number
UF3SC120009
Series
-
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-4
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2312-UF3SC120009K4S
Standard Package
30
REACH Status
REACH Unaffected
Power Dissipation (Max)
789W (Tc)
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