UJ4C075023K3S UnitedSiC
Артикул
UJ4C075023K3S
Бренд
UnitedSiC
Описание
750V/23MOHM, SIC, CASCODE, G4, T, N-Channel 750 V 66A (Tc) 306W (Tc) Through Hole TO-247-3
Цена
2 754 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/UJ4C075023K3S.jpg
Technology
SiCFET (Silicon Carbide)
Power Dissipation (Max)
306W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
750 V
Current - Continuous Drain (Id) @ 25°C
66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V
Rds On (Max) @ Id, Vgs
29mOhm @ 40A, 12V
Vgs(th) (Max) @ Id
6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
37.8 nC @ 15 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1400 pF @ 400 V
REACH Status
REACH Unaffected
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Series
-
Package
Tube
Part Status
Active
Mounting Type
Through Hole
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2312-UJ4C075023K3S
Standard Package
30
Operating Temperature
-55°C ~ 175°C
FET Feature
-
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