IRC640PBF VISHAY
Артикул
IRC640PBF
Бренд
VISHAY
Описание
MOSFET N-CH 200V 18A TO220-5, N-Channel 200 V 18A (Tc) 125W (Tc) Through Hole TO-220-5
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRC640PBF.jpg
Mounting Type
Through Hole
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
FET Feature
Current Sensing
Power Dissipation (Max)
125W (Tc)
Standard Package
50
Other Names
*IRC640PBF
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-220-5
Supplier Device Package
TO-220-5
Base Product Number
IRC640
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
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