IRF530STRRPBF VISHAY
Артикул
IRF530STRRPBF
Бренд
VISHAY
Описание
MOSFET N-CH 100V 14A TO263, N-Channel 100 V 14A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D?PAK (TO-263)
Цена
312 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF530STRRPBF.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
160mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
670 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.7W (Ta), 88W (Tc)
Mounting Type
Surface Mount
Standard Package
800
Other Names
IRF530STRRPBF-ND,742-IRF530STRRPBFDKR,IRF530STRRPBFDKR-ND,742-IRF530STRRPBFCT,IRF530STRRPBFDKR,742-IRF530STRRPBFTR,IRF530STRRPBFTR,IRF530STRRPBFTR-ND,IRF530STRRPBFCT,IRF530STRRPBFCT-ND
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
D?PAK (TO-263)
Base Product Number
IRF530
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V
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