IRFB9N65APBF VISHAY
Артикул
IRFB9N65APBF
Бренд
VISHAY
Описание
MOSFET N-CH 650V 8.5A TO220AB, N-Channel 650 V 8.5A (Tc) 167W (Tc) Through Hole TO-220AB
Цена
513 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFB9N65APBF.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
930mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1417 pF @ 25 V
FET Feature
-
Supplier Device Package
TO-220AB
RoHS Status
ROHS3 Compliant
Package / Case
TO-220-3
Series
-
Package
Tube
Part Status
Active
Base Product Number
IRFB9
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
*IRFB9N65APBF
Standard Package
1,000
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Power Dissipation (Max)
167W (Tc)
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