IRFBC20L VISHAY
Артикул
IRFBC20L
Бренд
VISHAY
Описание
MOSFET N-CH 600V 2.2A I2PAK, N-Channel 600 V 2.2A (Tc) 3.1W (Ta), 50W (Tc) Through Hole I2PAK
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFBC20L.jpg
Supplier Device Package
I2PAK
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.4Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 25 V
FET Feature
-
RoHS Status
RoHS non-compliant
Package / Case
TO-262-3 Long Leads, I?Pak, TO-262AA
Series
-
Package
Tube
Part Status
Obsolete
Base Product Number
IRFBC20
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
*IRFBC20L
Standard Package
50
REACH Status
REACH Unaffected
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Power Dissipation (Max)
3.1W (Ta), 50W (Tc)
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