IRFBE20PBF VISHAY
Артикул
IRFBE20PBF
Бренд
VISHAY
Описание
MOSFET N-CH 800V 1.8A TO220AB, N-Channel 800 V 1.8A (Tc) 54W (Tc) Through Hole TO-220AB
Цена
288 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFBE20PBF.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6.5Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
530 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
54W (Tc)
Mounting Type
Through Hole
Standard Package
1,000
Other Names
*IRFBE20PBF
Series
-
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Base Product Number
IRFBE20
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
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