IRFBF20L VISHAY
Артикул
IRFBF20L
Бренд
VISHAY
Описание
MOSFET N-CH 900V 1.7A I2PAK, N-Channel 900 V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Through Hole I2PAK
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFBF20L.jpg
Mounting Type
Through Hole
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
490 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 54W (Tc)
Standard Package
50
Other Names
*IRFBF20L
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-262-3 Long Leads, I?Pak, TO-262AA
Supplier Device Package
I2PAK
Base Product Number
IRFBF20
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
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