IRFD220PBF VISHAY
Артикул
IRFD220PBF
Бренд
VISHAY
Описание
MOSFET N-CH 200V 800MA 4DIP, N-Channel 200 V 800mA (Ta) 1W (Ta) Through Hole 4-HVMDIP
Цена
269 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFD220PBF.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
800mOhm @ 480mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
260 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1W (Ta)
Mounting Type
Through Hole
Standard Package
2,500
Other Names
*IRFD220PBF
Series
-
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
4-DIP (0.300", 7.62mm)
Supplier Device Package
4-HVMDIP
Base Product Number
IRFD220
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
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