IRFUC20PBF VISHAY
Артикул
IRFUC20PBF
Бренд
VISHAY
Описание
MOSFET N-CH 600V 2A TO251AA, N-Channel 600 V 2A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA
Цена
293 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFUC20PBF.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.4Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 42W (Tc)
Mounting Type
Through Hole
Standard Package
3,000
Other Names
*IRFUC20PBF
Series
-
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
TO-251AA
Base Product Number
IRFUC20
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
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